Oxide Nanoelectronics Technology

Oxide nano-electronic materials promise dramatic improvements in the performance and lifespan of electronic devices. Due to these superior properties, the materials have been implemented in radiation-hardened circuits for space applications, in an array of sensors and actuators, and within next-generation electronics such as ferroelectric memory.

Competitive advantage

  • Pioneering research into conducting materials with nanoscale topological features
  • Key skills in design of materials with sub-nanometer ion channels
  • Advanced scanning probe microscopy including instrument development
  • Demonstrated first domain wall electronics elements
  • A leading publication and IP profile within this critical research field
  • As a member of the Australian Research Centre (ARC) Centre of Excellence in future low-energy electronics technologies, this group has access to state-of-the-art nanoelectronics characterisation equipment.

Impact

  • Potential use in reconfigurable electronics, ultralow energy technology, domain wall memory, radiation detectors, sub-nanometer ion channels, and radiation hardened electronics

Successful applications

  • Domain wall memory, utilising magnetic oxides is approaching commercial implementation, team holds key IP in the field
  • Characterisation of bespoke circuits for critical hardened electronics applications

Capabilities and facilities

  • Specialised tools and expertise in materials synthesis using ultra-high vacuum technology and pulsed laser deposition
  • State-of-the art scanning probe microscopy material characterisation techniques

Our partners

  • US Office of Naval Research
  • Intel Corporation
  • Australian semiconductor manufacturers (Silanna, among others)
Tags
lensMicro Electronics